Solid-state imaging device and method for manufacturing same

ABSTRACT

The reduction in size, noise and voltage is realized in a MOS solid-state imaging device. A gate electrode in a pixel part is formed in a two-level structure. An amplifier gate of an amplifier transistor is formed in the first level while a select gate of a select transistor is formed in the second level. The both are structurally partly overlapped. With the first-level amplifier gate as self-alignment, ions are implanted for a select gate in the second level. Although the gate electrode if formed in one level as in the conventional requires a space of nearly a design rule between the amplifier gate and the select gate, the structure of the invention can eliminate such a dead space. Meanwhile, because the diffusion layer does not exist between the amplifier gate and the select gate, the diffusion layer is eliminated of sheet resistance and voltage drop. Also, the resistance and voltage decrease, resulting from the LDD region of a transistor gate end, are eliminated in one end of the amplifier gate and in one end of the select gate.

The subject matter of application Ser. No. 10/245,562 is incorporatedherein by reference. The present application is a continuation of U.S.application Ser. No. 10/245,562, filed Sep. 16, 2002, now U.S. Pat. No.6,822,306, which claims priority to Japanese Patent Application No.JP2001-281295, filed Sep. 17, 2001. The present application claimspriority to these previously filed applications.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a solid-state imaging device having astructure having a plurality of photoelectric converting elements eachconfiguring an imaging pixel to read out photo-charges stored on thephotoelectric converting elements by the use of a plurality oftransistors, and to a method for manufacturing same. More particularly,the invention relates to a solid-state imaging device to be made in areduced size and voltage, and to a method for manufacturing same.

2. Description of the Related Art

Conventionally, as a solid-state imaging device of the above kind, therehas been a proposal of a MOS-type solid imaging device having, in eachimaging pixel, a photodiode for photoelectric conversion and various MOStransistors for transferring, selecting, amplifying and resetting thephoto-charges stored on the photodiode.

FIG. 5 is a circuit diagram showing a configuration example of arelated-art pixel part in such a MOS-type solid-state imaging device.

FIG. 5 shows a configuration up to outputting the photoelectrons storedon a photodiode 10 onto a vertical signal line 12, wherein the verticalsignal line 12 has, at its lower end, a voltage output to a signalprocessing circuit of a hereinafter-referred S/H-CDS circuit.

Meanwhile, the vertical signal line 12, at an upper end, is connected toa load transistor 14 serving as a constant-current source at the outsideof the pixel part.

As shown in the figure, four MOS transistors 20, 22, 24, 26 are providedaround the photodiode (hereinafter, referred to as PD) 10.

At first, a reset transistor 20 and a transfer transistor 22 areconnected in tandem between a drive power source (drive voltage Vdd) andthe PD 10. A floating diffusion region (hereinafter, referred to as FDregion) 16 is provided between a source of the reset transistor 20 and adrain of the transfer transistor 22.

Meanwhile, a select transistor 24 and an amplifier transistor 26 areconnected in tandem between the vertical signal line 12 and the drivepower source (drive voltage Vdd). The amplifier transistor 26 has a gateconnected to the FD region 16.

A reset pulse is inputted to a gate of the reset transistor 20, atransfer pulse is to a gate of the transfer transistor 22, and selectpulse is to a gate of the select transistor 24.

In this structure, in case the select transistor 24 is turned ON, theamplifier transistor 26 and the constant-current source 14 at theoutside of the imaging region constitute a source follower.Consequently, the potential on the vertical signal line 12 has a valuefollowing a gate voltage of the amplifier transistor 26, i.e. apotential at the FD region 16, which is inputted to a signal processingcircuit.

Note that actually a plurality of pixel parts are connected to onevertical signal line so that a particular pixel can be selected by theselect transistor 24.

In the meanwhile, the conventional solid-state imaging device as in theabove has a defect that the pixel is difficult to reduce in its sizebecause PD and four transistors are required in one pixel.

Accordingly, it is one of the major problems to decrease, to whatextent, the area the transistors occupy of the pixel area in order toincrease the area for the PD.

Meanwhile, in the imaging region entirety, there are arranged in series,on the current path thereof, select transistors, amplifier transistorsand diffusion layers between them. In a particularly small pixel, thetransistor is small in its W length to increase resistance, resulting ina problem that voltage reduction is difficult due to the amount ofvoltage drop and noise increases.

It is an object of the present invention to provide a solid-stateimaging device that is possible to reduce the arrangement area of theamplifier and select transistors in each of a plurality of pixel parts,thus enabling the reduction in size, voltage, noise and the like, and amethod for manufacturing the same.

SUMMARY OF THE INVENTION

The present invention is characterized by having an imaging sectionhaving a plurality of pixel parts, the pixel part comprising:photoelectric converting means for storing photo-charge depending uponan amount of light reception; an amplifier transistor for taking out asignal corresponding to the photo-charge stored on the photoelectricconverting means; a select transistor for connecting selectively anoutput of the amplifier transistor to a signal line that is connected toa current source at an outside of the imaging section; a gate electrodeof the pixel part formed at least in a two-level structure; a gateelectrode of the amplifier transistor formed in a first level of thetwo-level structure; and a gate electrode of the select transistorformed in a second level of the two-level structure.

Also, the invention is characterized by having an imaging section havinga plurality of pixel parts, the pixel part comprising: photoelectricconverting means for storing photo-charges depending upon an amount oflight reception; an amplifier transistor for taking out a signalcorresponding to the photo-charge stored on the photoelectric convertingmeans; a select transistor for connecting selectively an output of theamplifier transistor to a signal line that is connected to a currentsource at an outside of the imaging section; a gate electrode of thepixel part formed at least in a two-level structure; a gate electrode ofthe amplifier transistor formed in a first level of the two-levelstructure; and a gate electrode of the select transistor formed in asecond level of the two-level structure; wherein the select transistorhas a channel layer formed self-aligned by implanting ions to a regionbelow the gate electrode of the select transistor after forming a gateelectrode of the amplifier transistor in the first level.

According to the solid-state imaging device of the invention, the gateelectrode of the pixel part is formed in a two-level structure whereinthe gate electrode of the amplifier transistor is formed in a firstlevel of the two-level structure and the gate electrode of the selecttransistor is formed in a second level of the two-level structure.Consequently, because the gate of the amplifier transistor and the gateof the select transistor can be closely arranged without a spacing, itis possible to reduce the arrangement space of the amplifier and selecttransistors. This contributes to size reduction of the solid-stateimaging device entirety due to the size reduction in the pixel parts.Correspondingly, the arrangement space of the photoelectric convertingmeans can be enlarged, making possible to contribute to the improvementin imaging sensitivity.

Meanwhile, because the amplifier transistor and the select transistorare closely arranged, the resistance on a current path can be reduced torealize the reduction in voltage and noise.

According to the method for manufacturing a solid-state imaging deviceof the invention, the gate electrode of the pixel part is formed in atwo-level structure wherein the gate electrode of the amplifiertransistor is formed in a first level of the two-level structure and thegate electrode of the select transistor is formed in a second level ofthe two-level structure. This can reduce the arrangement space of theamplifier and select transistors, thus contributing to size reduction ofthe solid-state imaging device entirety due to the size reduction in thepixel parts. Correspondingly, the arrangement space of the photoelectricconverting means can be enlarged, making possible to contribute to theimprovement in imaging sensitivity.

Meanwhile, because the amplifier transistor and the select transistorare closely arranged, the resistance on a current path can be reduced torealize the reduction in voltage and noise.

Furthermore, in this manufacturing method, a channel layer of the selecttransistor is formed self-aligned by implanting ions to a region belowthe gate electrode of the select transistor after forming a gateelectrode of the amplifier transistor in the first level. Consequently,the amplifier transistor can be suppressed from deviating incharacteristic. Eliminated is a potential gap as encountered in thetwo-level gate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing a configuration example of a pixelpart in a solid-state imaging device of the present invention;

FIG. 2 is a timing chart showing an operation example of the pixel partshown in FIG. 1;

FIG. 3 is a plan view showing an overall structure of a solid-stateimaging device having the pixel parts shown in FIG. 1;

FIGS. 4A-4D illustrate a sequence of steps in the manufacturing processof the device; and

FIG. 5 is a circuit diagram showing a configuration example of a pixelpart in a solid-state imaging device of a related art.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

An embodiment of the present invention will now be explained withreference to the drawings.

FIG. 1 shows a circuit diagram showing a configuration example of apixel part in a solid-state imaging device of the invention. FIG. 2 is atiming chart showing an operation example of the pixel part shown inFIG. 1.

Meanwhile, FIG. 3 is a plan view showing an overall structure of a MOSsolid-state imaging device provided with the pixel parts of FIG. 1.

The solid-state imaging device is different from the related art of FIG.5 in that the gate electrode in the pixel part is formed at least in atwo-level structure. In a first level is formed a gate electrode(amplifier gate) of an amplifier transistor 126 while in a second levelis formed a gate electrode (select gate) of a select transistor 124. Theboth are partly overlapped. Note that FIG. 1 typically shows the leveledstructure.

In case a gate electrode is formed in one level as in the related art,there is a need of a space of nearly the design rule between theamplifier gate and the select gate. However, the structure of thisembodiment eliminates such a dead space, making possible tocorrespondingly increase the space of a photodiode. Otherwise, the pixelpart itself can be made smaller.

Meanwhile, because the diffusion layer does not exist between theamplifier gate and the select gate, the diffusion layer is free of sheetresistance and voltage drop. Also, the resistance and voltage drop,resulting from the LDD region at the end of the transistor gate, areeliminated at one end of the amplifier gate and at one end of the selectgate. Accordingly, realized is the reduction of noise and voltage.

Incidentally, it is assumed in this embodiment that all the gateelectrodes other than the amplifier gates of the pixel part are formedby the gate electrodes in the second level.

Now, the structure and operation of the solid-state imaging device ofthis embodiment will be explained in the order.

As shown in FIG. 1, the pixel part of the solid-state imaging device ofthis embodiment is configured with a photodiode (PD) 110, verticalsignal line 112, MOS transistors 120, 122, 124, 126 and so on.

In FIG. 1, impedance is high at a lower end of the vertical signal line112 (voltage output to a hereinafter-referred S/H-CDS circuit). Thevertical signal line 112, at an upper end, is connected to a loadtransistor 114 as a constant current source at the outside of the pixelpart.

A reset transistor 120 and a transfer transistor 122 are connected intandem between a drive power source (drive voltage Vdd) and an output ofthe PD 110. An FD region 116 is provided between a source of the resettransistor 120 and a drain of the transfer transistor 122.

Meanwhile, the select transistor 124 and the amplifier transistor 126are connected in tandem between the vertical signal line 112 and thedrive power source (drive voltage Vdd), and the FD region 116 isconnected to a gate of the amplifier transistor 126.

A reset pulse is inputted to the gate of the reset transistor 120, atransfer pulse is inputted to the gate of the transfer transistor 122,and a select pulse is inputted to the gate of the elect transistor 124.

In this embodiment, the gate electrodes of the amplifier transistor 126and select transistor 124 are structured by the first and second levelsof a two-level structure in a partly overlapped state. The selecttransistor 124 and the amplifier transistor 126 are closely formed in astate without having a diffusion layer.

Explanation will be now briefly made on the overall configuration of theMOS image-type imaging device in this embodiment, using FIG. 3.

An imaging section 200 has the pixel parts, configured in FIG. 1,vertically and horizontally arranged in multiplicity in atwo-dimensional matrix form.

Meanwhile, a constant-current section 210 has a multiplicity ofconstant-current circuits arranged correspondingly to each pixel column.An S/H-CDS section 220 has a multiplicity of S/H-CDS circuits arrangedcorrespondingly to each pixel columns.

Vertical (V) select means 230 is to select a row of the pixel parts.Horizontal (H) select mean 240 is to sequentially read out a signal heldin the S/H-CDS circuit of the S/H-CDS section 220 onto the horizontalsignal line 118. The read signal is processed in an output section 250and outputted as an imaging signal.

Meanwhile, a TG 260 is a timing generator to generate and output a pulserequired in the operation of these sections.

Explanation will be now made on the operation of the pixel part of thisembodiment, using FIG. 2.

First, photoelectrons are stored onto the PD 110 in timing “t0” shown ona horizontal axis of FIG. 2. Next, the load transistor 114 is turned ONin timing “t1”.

Then, a reset pulse is inputted to the reset transistor 120 in timing“t2” to reset the FD region 116.

Next, the select transistor 124 is turned ON in timing “t3”.

Thereafter, the potential (reset level) on the vertical signal line 112is taken by the rear-staged S/H-CDS circuit in a period shown in “t4”.

Then, a transfer pulse is inputted in timing “t5” to transferphotoelectrons from the PD 110 to the FD region 116.

Thereafter, the potential (light level) on the vertical signal line 112is again taken by the rear-staged S/H-CDS circuit in a period shown in“t6”.

Next, the select transistor 124 is tuned OFF in timing “t7”.

Then, a reset pulse is inputted in timing “t8” to again reset the FDregion 116.

Finally, the load transistor 114 is tuned OFF in timing “t9”.

The S/H-CDS circuit takes and holds a difference between the two signalstaken in “t4” and “t6”. This signal is sequentially taken out by the Hselect means 240 as in the above.

Although, three horizontal lines of reset, selection and transfer passin the pixel part as noted above, the select gate is laid with a gateline extended as it is in a horizontal direction.

Meanwhile, the reset gate and the line gate are laid by metal linespassed in a horizontal direction. Due to this, a contact is providedonto the gate to be applied with voltage.

This is because of the finding that a second-level select gate rides onthe first-level amplifier gate to cause a step so that a contact, ifprovided in the vicinity of that, results in yield and reliabilitydegradation.

Also, because there are two horizontally extending metal lines per row,there is also an effect that an optical aperture is readily obtainedthus being effective in pixel reduction.

Meanwhile, the transfer gate and reset gate lines structured by metallayers can reduce resistance and increase response speed.

Next FIG. 4 is a sectional view showing a manufacturing process for asolid-state imaging device configured in the above.

Explanation will now be made on a two-level gate forming process in thisembodiment, with reference to FIG. 4.

First, in FIG. 4A, not-shown device isolation regions and well regionsare formed in a silicon substrate 40. Threshold-controlling As is ionimplanted to a region 41 where an amplifier gate is to be formed later.The region 41 is made into a P-type (P⁻) lower in concentration than theP-well.

Next, an amplifier gate oxide film 42A is formed to thereafter depositthereon Poly-Si (polysilicon) to be formed into a first-level gateelectrode film. Phosphorus doping and patterning are carried out in theorder to form an amplifier gate 43.

Next, in FIG. 4B, a mask of resist 50 is used on a region 44 where aselect gate is to be formed later, to ion-implant As for thresholdcontrol.

Herein, there is no effect of deviation in mask alignment because ofself-alignment at an end of the amplifier gate as shown in the figure.The dose is higher than that for the p region 41, i.e. in a degreemaking the region 44 neutral or n.

Then, the oxide film 42A is once stripped away by a wet process, tocause re-oxidation thereby forming an oxide film 42B.

Poly-Si, to be formed into a second-level gate electrode film, isdeposited on that layer. Phosphorus doping and patterning are carriedout in the order, thereby forming a select gate 45 in a second level.

Next, in FIG. 4C, As is ion-implanted for LDDs in the opposite-sidedregions 46. Thereafter, a TEOS layer 47 is deposited by LP-CVD andoxidized in a short time.

Furthermore, Poly-Si is deposited by LP-CVD and etched back in theentire surface, to form a sidewall 48.

Next, in FIG. 4D, n⁺ ions are implanted, for S/D, in regions 49 deviatedsomewhat outside of the LDD regions 46. The Poly-Si of the sidewall 48is removed by CDE.

Incidentally, the subsequent processes have no direct bearing on theinvention and hence omittedly explained.

Herein, the characterization lies in that the ion implant region forcontrolling a threshold of the select transistor is n-type and theamplifier gate is formed self-aligned at its one end.

Namely, despite the amplifier gate and the select gate have a distanceof approximately 10 nm by an amount of a thin oxide film, slightpotential barrier occurs upon flowing a current. However, the potentialbarrier can be eliminated by the n-type ion-implant region.

Also, in case the ion implant region deviates at its edge, it causescharacteristic variation in the amplifier transistor. This, however, canbe prevented by self-alignment.

In the solid-state imaging device in the present embodiment structuredas above, the following effect can be obtained by the followingstructure.

First, because the amplifier gate and select gate can be arrangedadjacent without a spacing, the pixel can be size-reduced or thephotodiode can be size-increased.

Also, it is possible to realize reduction of voltage and noise bydecreasing the resistance through a current path.

Also, by providing only a select gate by directly a gate line in ahorizontal direction to lay reset and transfer gates in the upper-levelmetal line, it is possible to exclude the deterioration in reliabilityin providing a contact in the select gate having a step caused by theoverlap in a two-level gate as shown in FIG. 4, and to prevent thedeterioration yield and reliability encountered in a two-level gate.Meanwhile, by broadening the optical aperture of the pixel, it ispossible to achieve size reduction of the pixel part.

Meanwhile, by implanting n-type ions in the ion-implant region forcontrolling a threshold of a select transistor by self-alignment afterforming an amplifier gate, the amplifier transistor can be suppressedfrom deviating in its characteristic. Also, eliminated can be apotential gap as encountered in the two-level gate.

Incidentally, although the above explained on the example that the pixelpart was configured with one photodiode and four MOS transistors, theinvention is not limited to such a structure but is applicable to astructure having at least photoelectric converting means andamplifier-and-select two transistors. Modification is possibleconcerning the other structural elements.

According to the solid-state imaging device of the invention, the gateelectrode of the pixel part is formed in a two-level structure whereinthe gate electrode of the amplifier transistor is formed in a firstlevel of the two-level structure and the gate electrode of the selecttransistor is formed in a second level of the two-level structure.Consequently, because the gate of the amplifier transistor and the gateof the select transistor can be closely arranged without a spacing, itis possible to reduce the arrangement space of the amplifier and selecttransistors. This contributes to size reduction of the solid-stateimaging device entirety due to the size reduction in the pixel parts.Correspondingly, the arrangement space of the photoelectric convertingmeans can be enlarged, making possible to contribute to the improvementin imaging sensitivity.

Meanwhile, because the amplifier transistor and the select transistorare closely arranged, the resistance on a current path can be reduced torealize the reduction in voltage and noise.

According to the method for manufacturing a solid-state imaging deviceof the invention, the gate electrode of the pixel part is formed in atwo-level structure wherein the gate electrode of the amplifiertransistor is formed in a first level of the two-level structure and thegate electrode of the select transistor is formed in a second level ofthe two-level structure. This can reduce the arrangement space of theamplifier and select transistors, thus contributing to size reduction ofthe solid-state imaging device entirety due to the size reduction in thepixel parts. Correspondingly, the arrangement space of the photoelectricconverting means can be enlarged, making possible to contribute to theimprovement in imaging sensitivity.

Meanwhile, because the amplifier transistor and the select transistorare closely arranged, the resistance on a current path can be reduced torealize the reduction in voltage and noise.

Furthermore, in this manufacturing method, a channel layer of the selecttransistor is formed self-aligned by implanting ions to a region belowthe gate electrode of the select transistor after forming a gateelectrode of the amplifier transistor in the first level. Consequently,the amplifier transistor can be suppressed from deviating incharacteristic. Eliminated is a potential gap as encountered in thetwo-level gate.

1. A solid-state imaging device having an imaging section containing aplurality of pixel parts, each pixel part comprising: photoelectricconverting unit for storing photo-charge proportional to an amount oflight incident to said unit; an amplifier transistor having asingle-layer gate electrode; a select transistor having a single-layergate electrode; wherein the amplifier transistor gate electrode has aportion that is overlapped by a portion of the gate electrode for theselect transistor and a region centrally located below the amplifiertransistor gate electrode is a doped well region having a majorityportion that is doped at a first concentration and a region locatedbelow the select transistor gate electrode is a doped well region havinga majority portion that is doped at a second concentration differentfrom the first concentration.
 2. A solid-state imaging device accordingto claim 1, wherein the select transistor has a channel layersubstantially aligned with an end of the amplifier transistor gateelectrode and is formed by self-alignment by implanting ions to a regionbelow the to-be-formed gate electrode of the select transistor afterforming the gate electrode of the amplifier transistor in the firstlevel.
 3. A solid-state imaging device according to claim 1, furthercomprising a floating diffusion region for receiving the photo-chargestored by the photoelectric converting unit and supplying same to thegate electrode of the amplifier transistor, transfer unit fortransferring the photo-charge stored by the photoelectric convertingunit to the floating diffusion region, and a reset transistor forresetting the charge in the floating diffusion region.
 4. A solid-stateimaging device according to claim 3, wherein the pixel part is formedwith a photo-sensor element as the photoelectric converting unit, and atransfer transistor as the transfer unit.
 5. A solid-state imagingdevice according to claim 3, wherein the select transistor has a gatecontact disposed offset from the location of the select transistor, andwherein a gate of the transfer transistor and a gate of the resettransistor are connected to metal lines in the upper level via contactholes formed directly above said transistors.
 6. A solid-state imagingdevice according to claim 1, wherein a single continuous insulating bodyis formed the entire length of the overlap between the gate of theamplifier transistor and gate of the select transistor.
 7. A solid-stateimaging device according to claim 1, wherein the gate electrodes of boththe select transistor and the amplifier transistor comprisepoly-silicon.
 8. A solid-state imaging device according to claim 1,wherein the single-layer gate electrodes of the amplifier and selecttransistors are disposed so as to form a two-level gate structurecomprising a first lower level and a second upper level such that thesingle-layer gate electrode of the amplifier transistor is formed in thefirst level of the two-level structure; and the single-layer gateelectrode of the select transistor has a portion disposed on the firstlevel of the two-level structure adjacent the gate electrode of theamplifier transistor and has a portion disposed in the second level ofthe two-level structure such that the portion on the second leveloverlaps the gate electrode of the amplifier transistor in the firstlevel.
 9. A solid-state imaging device having an imaging sectioncontaining a plurality of pixel parts, each pixel part comprising: aphotoelectric converting unit for storing photo-charge proportional toan amount of light incident to said unit; an amplifier transistor havinga gate electrode; a select transistor having a gate electrode; andwherein the amplifier transistor rate electrode has a portion that isoverlapped by a portion of the crate electrode for the select transistorand a region centrally located below the amplifier transistor rateelectrode is a doped well region having a majority portion that is dopedat a first concentration and a region located below the selecttransistor gate electrode is a doped well region having a majorityportion that is doped at a second concentration different from the firstconcentration.